Optoelektronik integratsiyalangan qurilmalar sinfi sifatida organik yorug'lik{0}}chiqaruvchi maydon-ta'sir tranzistorlari (OLET) ikkita qurilma funktsiyasini, organik maydon-effekt tranzistorlarini (OFET) va organik yorug'likni{{3} birlashtiradi. }}emitting diodlar (OLED), bir xil qurilmada, yuqori integratsiya va oddiyroq integratsiya jarayonlari bilan. Bu yangi moslashuvchan displey va organik pompalanadigan lazer sohalarida muhim ilmiy va texnik ahamiyatga ega.
In recent years, Dong Huanli's research group from the Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences has been working on the preparation of OLET core high-mobility light-emitting organic semiconductor materials ( Nat. Commun., 2015, 6, 100032; J. Am. Chem. Soc., 2017, 139, 17261; J. Am. Chem. Soc., 2020, 142, 6332; Angew. Chem. Int. Ed., 2021. 60, 14902) and OLET device construction (Adv. Mater., 2019, 31, 1903175; Angew. Chem. Int. Ed., 2021, 60, 20274; Adv. Mater., 2021, 2007149; Adv. Mater., 2021, 2100704).
Morfologik, arzon narxlardagi va oson moslashtirish kabi diversifikatsiyalangan displey ilovalari ehtiyojlarini hisobga olgan holda tadqiqotchilar chiziqli yorugʻlikdan kelib chiqadigan murakkab jarayon, yomon barqarorlik va past diafragma nisbatiga ega anʼanaviy vertikal OLET qurilmasining yangi turini taklif qilishdi. -planar OLET qurilmalarining chiqarish shakli. Planar sirt yorug'lik manbai OLET qurilma tuzilishidan chiqadi (CTB-OLET, 1-rasm).
Shakl 1 Yangi turdagi tekis sirt yorug'lik manbai OLET displey qurilmasi primitiv
Qurilma strukturasida yorug'lik chiqaradigan birlik va transport qatlami o'rtasida zaryadni tashish buferi qatlami (CTB qatlami) kiritiladi, bu-drenaj nuri chiqaradigan qatlam ostida oqim taqsimotini samarali tartibga soladi va o'ynaydi. sirt yorug'lik manbalarining emissiyasida muhim rol o'ynaydi. ta'sir.
Simulyatsiyalar shuni ko'rsatadiki, planar OFET qurilmasida CTB zaryad tashish qatlamining kiritilishi an'anaviy planar OFET qurilmasida lateral elektr maydon taqsimotini o'zgartiradi va shu bilan drenaj elektrodi ostida zaryad taqsimotining bir xilligini yaxshilaydi. Ushbu hodisaga split elektrod qurilmasi strukturasini loyihalash orqali erishiladi. Yaxshi tasdiqlangan.
Based on this device structure, a suitable light-emitting layer was introduced to prepare a flat surface light source OLET display device element with RGB three primary colors, which showed good gate control capability (on-off ratio>10 6 ) and was not immune to gate voltage. Affects the shape of the area light's glow.
Further due to the flexible design of the device structure, a large aperture ratio OLET display device based on a U-shaped drain electrode was studied and prepared (in the case of considering the area occupied by necessary components such as supporting circuits and switching transistors in the actual pixel, the opening rate can still be >80 foiz).
Shu bilan birga, noyob kuchlanish-displey qurilmasi sifatida toʻyingan ish hududiga erishish oson, bu esa manba{1}}drenaj kuchlanishidan qatʼiy nazar yaxshi barqarorlikni koʻrsatadi. Bu katta diafragma nisbati, tekis{2}}oʻrnatilgan OLET displey qurilmasi past haroratda ishlov berish, yorugʻlik egiluvchanligi va OLED jarayonlari bilan moslik-da oʻziga xos afzalliklarga ega. yaxshi dastur istiqbollari.
Yaqinda tegishli tadqiqot natijalari Advanced Materials jurnalida chop etildi. Tadqiqot ishi Xitoy Milliy tabiiy fanlar jamg'armasi, Fan va texnologiyalar vazirligi va Xitoy Fanlar akademiyasi tomonidan qo'llab-quvvatlandi.
